Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
- 1 March 2003
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 42 (Part 2, No) , L235-L238
- https://doi.org/10.1143/jjap.42.l235
Abstract
The structural and optical properties of a 10-period (10.7 nm GaN)/(10.1 nm Al0.25Ga0.75N) multiple quantum well structure grown on an a-plane GaN template layer were investigated. Despite high threading dislocation density (~3×1010 cm-2) and surface undulations, abrupt quantum well interfaces produced well-defined satellite peaks out to the second order in a symmetric high-resolution X-ray diffraction scan. Thorough analysis of X-ray diffraction measurements (kinematical analysis and dynamic simulations) provided accurate measurements of the quantum well dimensions and barrier composition. Room temperature photoluminescence emission from the structure exhibits quantum confinement consistent with quantum wells free of polarization-induced electric fields.Keywords
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