High‐Performance All‐Polymer Transistor Utilizing a Hygroscopic Insulator
- 5 July 2004
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 16 (13) , 1112-1115
- https://doi.org/10.1002/adma.200400030
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Oligothiophene‐Based Networks Applied for Field‐Effect TransistorsAdvanced Materials, 2003
- Flexible Organic Circuits with Printed Gate ElectrodesAdvanced Materials, 2003
- Low‐k Insulators as the Choice of Dielectrics in Organic Field‐Effect TransistorsAdvanced Functional Materials, 2003
- Polymer Gate Dielectrics and Conducting-Polymer Contactsfor High-Performance Organic Thin-Film TransistorsAdvanced Materials, 2002
- Printed plastic electronics and paperlike displaysJournal of Polymer Science Part A: Polymer Chemistry, 2002
- Plastic transistors in active-matrix displaysNature, 2001
- Two-dimensional charge transport in self-organized, high-mobility conjugated polymersNature, 1999
- Polycarbazole-based electrochemical transistorJournal of Solid State Electrochemistry, 1998
- Gas-Sensitive Schottky Gated Field Effect Transistors Utilizing Poly(3-alkylthiophene) FilmsJapanese Journal of Applied Physics, 1991
- Characterization of a solid-state polyaniline-based transistor: water vapor dependent characteristics of a device employing a poly(vinyl alcohol)/phosphoric acid solid-state electrolyteJournal of the American Chemical Society, 1987