Interface chemistry and structure of multiply oxidized barrier spin-tunnel junctions
- 1 May 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (9) , 5200-5202
- https://doi.org/10.1063/1.373294
Abstract
Nb/Fe/Al 2 O 3 /CoFe/Nb spin-tunnel junctions fabricated using a multiple oxidation technique have been characterized using high spatial resolution electron microscopy techniques. Junction magnetoresistance values up to 6.2% at room temperature and 9.2% at 77 K were obtained for junctions fabricated using this technique. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy were used to study the chemistry and interface structure of the barrier layer; elemental mapping showed the degree of chemical homogeneity across the layers and high spatial resolution electron energy loss spectroscopy revealed changes in the oxidation state and d-shell occupancies of Fe and Co across the layers, which need to be considered when modelling the spin-tunneling effect. Pinholes across the barrier were also observed by high resolution electron microscopy.This publication has 5 references indexed in Scilit:
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