Rapid direct writing of high-aspect-ratio trenches in silicon
- 23 February 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (8) , 475-477
- https://doi.org/10.1063/1.98178
Abstract
Deep trenches have been etched in crystalline silicon with polarization-controlled, variable curvature walls. Scan speeds of up to 10 mm/s have been demonstrated. A qualitative understanding of the etching process has been developed which is based on a local, melt-enhanced etch rate.Keywords
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