Cross-Substitutional Alloys of InSb

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Abstract
The paper considers cross‐substitutional alloys of produced by replacing In by combinations of (Cd,Sn) or (Zn,Sn) and by replacing Sb by combinations of (Sn,Te), (Sn,Se), or (Ge,Te), so as to keep the ratio of valence electrons to lattice sites equal to four. Limits of solid solution have been determined by x‐ray and photomicrograph techniques. All the alloys so produced are degenerate semiconductors of very high carrier concentrations. Values of carrier density and optical energy gap have been determined as a function of composition and the results extrapolated to give data for the conduction band minima in itself. It is found that the 〈111〉 minima lie at 0.47 ev above the valence band maximum and that the (000) minimum will accept before appreciable number of electrons enter the 〈111〉 minima.

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