Hydrogen motion in thermally annealed sputter-deposited hydrogenated amorphous silicon
- 15 August 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (4) , 1240-1244
- https://doi.org/10.1063/1.339675
Abstract
It is shown that the bulk hydrogen concentration in radio‐frequency (rf) sputtered films of hydrogenated amorphous silicon (a‐Si:H) can be determined from reflected electron energy‐loss spectroscopy signals obtained even during ion beam etching of the film. As a result, depth profiling, with a 50‐Å depth resolution of the hydrogen concentration, and with 1 at. % accuracy of the a‐Si: Hx/a‐Si: Hy multilayer, is achieved. Using this technique to depth profile annealed multilayer samples of rf sputter‐deposited a‐Si:H, it was found that despite the loss of hydrogen at elevated temperatures the original interface widths are unchanged even after a 500 °C, 1 h anneal. This result contrasts sharply with previous measurements of hydrogen motion in glow‐discharge a‐Si:H and indicates a significant difference between the two types of a‐Si:H with respect to hydrogen motion at elevated temperatures.This publication has 6 references indexed in Scilit:
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