Non-contact monitoring of electrical characteristics of silicon surface and near-surface region

1 January 1998

conference paper
Published by AIP Publishing

https://doi.org/10.1063/1.56804

Abstract

The SPV-based method of Surface Charge Profiling (SCP) is discussed, and its applications in silicon surface monitoring in IC manufacturing are reviewed. The SCP method shows high sensitivity to changes in the condition of the Si surface (e.g. surface cleaning operations) and a very thin near-surface region (e.g. variations of active dopant concentration near the surface).

Keywords

INTEGRATED CIRCUIT TECHNOLOGY
SILICON
ELECTRIC PROPERTIES
PHOTOVOLTAIC EFFECTS
ELECTRIC VARIABLES MEASUREMENT
SURFACE PHENOMENA
ELECTRON-HOLE RECOMBINATION

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