X-Ray Determination of Anharmonicity inSi
- 2 July 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 43 (1) , 40-43
- https://doi.org/10.1103/physrevlett.43.40
Abstract
X-ray intensities from over 1000 reflections in single-crystal Si at 300, 78, and 13.5 K, previously obtained by one of us (J.-L.S.) have been analyzed for anharmonicity when where diffraction occurs from core electrons only. At 78 K we find and moments for V which are ∼ 50% and 500% larger, respectively, than expected for a harmonic lattice, and evidence for localization of the V atoms off the lattice sites by ∼0.2 Å. No evidence of such large anharmonicity is found for Si atoms at all three temperatures.
Keywords
This publication has 16 references indexed in Scilit:
- HYPERFINE INTERACTION STUDIES OF CHEVREL PHASE SUPERCONDUCTORSLe Journal de Physique Colloques, 1978
- Anharmonicity as an explanation for anomalous resistance of high-Tc superconductorsSolid State Communications, 1976
- The electron distribution in superconducting alloys: I. Analysis of V3Si at room temperatureSolid State Communications, 1976
- Structural instability and superconductivity in A-15 compoundsReviews of Modern Physics, 1975
- Heat capacity ofcompounds and the relationship betweenand anharmonicityPhysical Review B, 1975
- Harmonic-Phonon Generation by Shear Waves inSiPhysical Review Letters, 1973
- Pressure Dependence of Elastic Constants and of Shear-Mode Instability inSi andGePhysical Review Letters, 1971
- Temperature-Dependent Isomer Shift and Anharmonic Binding ofinSn from Mössbauer-Effect MeasurementsPhysical Review B, 1968
- Direct Measurement of the Softening ofSi at Low TemperaturePhysical Review B, 1966
- Low-Temperature Structural Transformation inSiPhysical Review B, 1966