Computer Simulations Of Transient Operation Of Gaas Etalons

Abstract
Time-dependent behavior of GaAs nonlinear Fabry-Perot etalons has been investigated with a computer model using the Banyai-Koch plasma theory for the GaAs nonlinear optical properties. Investigation of single-wavelength transient operation of GaAs etalons as optical logic gates has shown that useful differential energy gain is not achievable for optical pulses shorter than about ten times the charge carrier lifetime in the semiconductor.

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