60 Gbit/s time-division multiplexer in SiGe-bipolartechnology with special regard to mounting and measuring technique
- 10 April 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (8) , 679-680
- https://doi.org/10.1049/el:19970442
Abstract
A 2:1 time-division multiplexer is presented which operates at up to 60 Gbit/s. This is the highest data rate ever achieved by an integrated circuit in any technology. The output voltage swing is 0.5 Vp-p (for 50 Ω on-chip matching and 50 Ω external load). The chips were fabricated using an advanced SiGe-bipolar technology (fT = 68 GHz) and then mounted on a comparatively simple measuring socket.Keywords
This publication has 3 references indexed in Scilit:
- Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/sIEEE Journal of Solid-State Circuits, 1996
- 46 Gbit/s multiplexer and 40 Gbit/s demultiplexerIC modules using InAlAs/InGaAs/InP HEMTsElectronics Letters, 1996
- 50 Gbit/s time-division multiplexer in Si-bipolartechnologyElectronics Letters, 1995