THE UPPER CRITICAL FIELD H c2 OF NbN FILM PREPARED BY REACTIVE SPUTTERING
- 1 May 1969
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (9) , 285-286
- https://doi.org/10.1063/1.1652817
Abstract
The upper critical field Hc2 of about 200 kOe was obtained for niobium nitride films prepared by reactive sputtering. Electron microscopy was used to determine the crystal structure. It was shown that the electron diffraction patterns of these films were that of the NbN with the NaCl crystal structure.Keywords
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