Deep submicron PHEMTs characterization with spectrally resolved carrier recombination imaging
- 28 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 239-242
- https://doi.org/10.1109/iedm.1998.746344
Abstract
A novel technique-spectrally resolved carrier recombination imaging-has been developed to characterize deep submicron PHEMTs. While a correlation between electroluminescence of 0.63 /spl mu/m and the gate current is observed in PHEMTs, that between electroluminescence of 1 /spl mu/m and the gate/drain current product is also verified. This distinct current dependence result is further supported by observing different polarization characteristics of 1 /spl mu/m and 0.63 /spl mu/m light emission, suggesting that they are generated from different layers inside the device. By using the established correlation function and post-processing the light emission image data, the distribution of electric field and current density along gate width is determined for the first time.Keywords
This publication has 4 references indexed in Scilit:
- A high efficiency 0.15 μm 2-mil thick InGaAs/AlGaAs/GaAs V-band power HEMT MMICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 0.15 μm InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield V-band power MMICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Hot-electron electroluminescence in GaAs transistorsSemiconductor Science and Technology, 1992
- Impact ionization and light emission in AlGaAs/GaAs HEMT'sIEEE Transactions on Electron Devices, 1992