New encapsulant source for III–V quantum well disordering
- 23 January 1995
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (4) , 472-474
- https://doi.org/10.1063/1.114060
Abstract
We report here the characteristic features of a newly developed dielectric encapsulant cap layer, which after adequate thermal treatments, leads to a reproducible local alloy disorder in several III–V quantum well (QW) structures. Data are presented to demonstrate its universality, namely, its ability to promote alloy-disorder free of charge carriers either on group III or group V sublattice depending on the type of the QW structure.Keywords
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