High Current, Common-Base GaN-AIGaN Heterojunction Bipolar Transistors
Open Access
- 1 January 1999
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 3 (3) , 144-146
- https://doi.org/10.1149/1.1390983
Abstract
Current densities up to at temperatures up to were obtained in heterojunction bipolar transistors grown by molecular beam epitaxy. At , the power density was . Room temperature dc current gains of 15–20 were obtained. In the common‐base mode of operation. was approximately equal to , indicating high emitter injection efficiency. ©2000 The Electrochemical SocietyThis publication has 0 references indexed in Scilit: