Improved Phosphosilicate Glass Passivation Against Cu Contamination Using the Rapid Thermal Annealing Process

1 March 1994

journal article
Published by The Electrochemical Society in Journal of the Electrochemical Society

Vol. 141 (3) , 734-736
https://doi.org/10.1149/1.2054801

Abstract

Passivation against Cu contamination is a key technology for realizing multilevel Cu interconnection for ultralarge scale integrated circuits (ULSI). Phosphosilicate glass (PSG) with rapid thermal annealing (RTA) is found to provide no less of a passivation effect than furnace‐annealed (FA) PSG films, while significantly reducing the thermal budget of the PSG annealing from to . This suggests that the PSG‐RTA process is applicable to 0.25 μm level metal oxide semiconductor (MOS) ULSIs, since both the amount of Cu diffusion and the thermal budget are within the limits of 0.25 μm MOS device technology.

Keywords

PASSIVATION
THERMAL ANNEALING
PHOSPHOSILICATE GLASS
CU CONTAMINATION
RAPID THERMAL
THERMAL BUDGET

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