Si/Si 1−x Ge x heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation
- 15 October 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (8) , 3911-3916
- https://doi.org/10.1063/1.365696
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- In-plane transport properties of Si/Si/sub 1-x/Ge/sub x/ structure and its FET performance by computer simulationIEEE Transactions on Electron Devices, 1994
- High-Field Electron Transport in SiGe AlloyJapanese Journal of Applied Physics, 1994
- Electron transport and impact ionization in SiPhysical Review B, 1990
- Impact ionization of electrons in silicon (steady state)Journal of Applied Physics, 1983
- The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materialsReviews of Modern Physics, 1983
- Electron-phonon scattering and high-field transport in-type SiPhysical Review B, 1978
- First-order optical and intervalley scattering in semiconductorsPhysical Review B, 1976
- Electron drift velocity in siliconPhysical Review B, 1975
- Intervalley Scattering Selection Rules for Si and GePhysica Status Solidi (b), 1970
- Effect of the Superconducting Transition on the Creep in LeadPhysica Status Solidi (b), 1970