Substrate effect on the crystal structure and ferroelectricity of low-temperature-deposited Pb(Zr, Ti)O3 thin films by metalorganic chemical vapor deposition

9 June 2003

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 82 (23) , 4122-4124
https://doi.org/10.1063/1.1581975

Abstract

Tetragonal Pb ( Zr 0.35 Ti 0.65 ) O 3 thin films were deposited at deposition temperatures ranging from 395 °C to 510 °C on (111) Pt/Ti/SiO 2 / Si , (111) Ir/TiO 2 / SiO 2 / Si , and (100) Ru/SiO 2 / Si substrates by metalorganic chemical vapor deposition. When the deposition temperature was above 415 °C, the remanent polarization (Pr) and the coercive field (Ec) were almost the same for the Pb ( Zr 0.35 Ti 0.65 ) O 3 thin filmsdeposited on these substrates. This means that the electrical properties were not significantly affected by the type of substrate above 415 °C. However, at 395 °C, the filmdeposited on the (111) Pt/Ti/SiO 2 / Si substrate showed a larger Pr value than those on the (111) Ir/TiO 2 / SiO 2 / Si and (100) Ru/SiO 2 / Si substrates. The lower crystallinity of the filmsdeposited on the (111) Ir/TiO 2 / SiO 2 / Si and (100) Ru/SiO 2 / Si substrates, due to the oxidation of the Ir and Ru surfaces before starting film deposition, thwarts the attainment of good ferroelectricity.

Keywords

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