Wafer bonded 1.55 μm vertical-cavity lasers with continuous-wave operation up to 105 °C
- 25 April 2001
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (18) , 2632-2633
- https://doi.org/10.1063/1.1368377
Abstract
We report continuous-wave, electrically pumped operation of a 1526 nm vertical-cavity surface-emitting laser. An InP/InGaAsP active region was wafer bonded to GaAs/AlGaAs mirrors, with a superlattice barrier to reduce the number of nonradiative recombination centers in the bonded active region.
Keywords
This publication has 5 references indexed in Scilit:
- Superlattice barrier 1528-nm vertical-cavity laser with 85/spl deg/C continuous-wave operationIEEE Photonics Technology Letters, 2000
- Low-threshold index-guided 1.5 μm long-wavelength vertical-cavity surface-emitting laser with high efficiencyApplied Physics Letters, 2000
- 1-mW CW-RT monolithic VCSEL at 1.55 μmIEEE Photonics Technology Letters, 1999
- Minimum temperature sensitivity of 1.55 μm vertical-cavity lasers at −30 nm gain offsetApplied Physics Letters, 1998
- Wafer fusion: materials issues and device resultsIEEE Journal of Selected Topics in Quantum Electronics, 1997