Impact ionization coefficients in Si1−xGex
- 9 January 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (2) , 204-205
- https://doi.org/10.1063/1.113134
Abstract
We have measured the electron and hole impact ionization coefficients in Si1−xGex alloys. Carrier multiplication measurements were made on relaxed Si1−xGex/Si diodes grown by gas source molecular beam epitaxy. The hole to electron impact ionization coefficient ratio, β/α, varies from 0.3 to 4 in the composition range of x=0.08–1.0. © 1995 American Institute of PhysicsKeywords
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