Hydrogen passivation of interface defects in GaAs/AlAs short-period superlattices
- 1 June 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (22) , 2788-2790
- https://doi.org/10.1063/1.106851
Abstract
We have observed an increase of overall luminescence intensity and carrier lifetimes of GaAs/AlAs short-period superlattices after exposure of the samples to low-energy hydrogen ion-gun irradiation. We conclude from our data that interface defects which may become important as nonradiative recombination centers in short-period superlattices with only a few monolayers period can be passivated by hydrogen.Keywords
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