TRANSIENT LASER-INDUCED PROCESSES IN SEMICONDUCTORS
- 1 January 1980
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser IrradiationPhysical Review Letters, 1979
- A melting model for pulsing-laser annealing of implanted semiconductorsJournal of Applied Physics, 1979
- Temperature rise induced by a laser beam II. The nonlinear caseApplied Physics Letters, 1978
- Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiationApplied Physics Letters, 1978
- cw argon laser annealing of ion-implanted siliconApplied Physics Letters, 1978
- Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted siliconApplied Physics Letters, 1978
- Radiation-induced conduction under high electric field (1×106 to 1×108 V/m) in polyethylene-terephthalateApplied Physics Letters, 1978
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- Velocity of propagation in the shock-crystallization of sputtered amorphous germaniumSolid State Communications, 1973
- On a peculiar phænomenon in the electro-deposition of antimonyJournal of Computers in Education, 1855