An epitaxial emitter cap, SiGe-base bipolar technology with 22 ps ECL gate delay at liquid nitrogen temperature

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2 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/vlsit.1992.200669

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This publication has 1 reference indexed in Scilit:

Novel in-situ doped polysilicon emitter process with buried diffusion source (BDS)
IEEE Electron Device Letters, 1991