1.5 μm GaInAsP/InP buried heterostructure lasers fabricated by hybrid combination of liquid- and vapour-phase epitaxy

4 March 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (5) , 237-239
https://doi.org/10.1049/el:19820161

Abstract

1.5 μm GaInAsP/InP buried heteostructure lasers been successfully fabricated by using a hybrid combination of liquid- (LPE) and vapour-phase epitaxy (VPE). Current confinement is achieved by the overgrown VPE high resistivity InP layer (electron concentration of less than 10¹⁵cm⁻³). A threshold current of about 85 mA is obtained for a cavity length of about 200 μm and an active layer width of 4 μm.

Keywords

VAPOUR-PHASE EPITAXY
ELECTRON CONCENTRATION
GAINASP/INP BURIED HETEROSTRUCTURE LASERS
1.5 MU M
III-V SEMICONDUCTORS
HYBRID COMBINATION
LPE
THRESHOLD CURRENT

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