Resonant tunnelling through arrays of nanostructures
- 1 January 1998
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (1) , 35-42
- https://doi.org/10.1088/0268-1242/13/1/006
Abstract
We investigate three-dimensional resonant tunnelling (RT) through a double potential barrier with a periodic modulation of the quantum well in the plane of the layers. Both elastic and phonon-assisted RT through transverse minibands separated by minigaps are considered. By using the Breit-Wigner-like formula for the transmission probability we find a more abrupt upward portion (front) of the current-voltage characteristics and a broader negative differential resistance region than in `conventional' RT through double barrier heterostructures. Phonon-assisted tunnelling characteristics follow the same trends.Keywords
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