Two-dimensional spatial-phase-locked electron-beam lithography via sparse sampling
- 1 November 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 18 (6) , 3268-3271
- https://doi.org/10.1116/1.1314371
Abstract
We report a new mode of spatial-phase-locked electron-beam lithography based on alignment of each e-beam deflection field to a fiducial grid on the substrate. Before exposing the pattern in a given field, the fiducial grid is sparsely sampled with the electron beam at a subexposure dose. These samples form a two-dimensional moiré pattern that is analyzed to calculate field shift, scale, rotation, nonorthogonality, and trapezoidal distortion. Experimental verification of the approach was carried out with a scintillating fiducial grid quenched by interference lithography. Despite a poor signal-to-noise ratio, we achieved sub-beamstep field-stitching and pattern-placement accuracy.Keywords
This publication has 6 references indexed in Scilit:
- Improved pattern-placement accuracy in e-beam lithography via sparse-sample spatial-phase lockingMicroelectronic Engineering, 2000
- Scintillating global-fiducial grid for electron-beam lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Spatial-phase-locked electron-beam lithography with a delay-locked loopJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Analysis of distortion in interferometric lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Spatial-phase-locked electron-beam lithography: Initial test resultsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- A new approach to high fidelity e-beam and ion-beam lithography based on an i n s i t u global-fiducial gridJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991