Boron Diffusion in Bulk Cobalt Disilicide
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Lattice and grain boundary self-diffusion in Ni2Si: Comparison with thin-film formationJournal of Applied Physics, 1990
- The diffusion of elements implanted in films of cobalt disilicideJournal of Applied Physics, 1988
- Diffusion of Sb, Ga, Ge, and (As) in TiSi2Journal of Applied Physics, 1988
- Diffusion of boron, phosphorus, and arsenic implanted in thin films of cobalt disilicideJournal of Vacuum Science & Technology A, 1988
- A study of the leakage mechanisms of silicided n+/p junctionsJournal of Applied Physics, 1988
- Boron, phosphorus, and arsenic diffusion in TiSi2Journal of Applied Physics, 1986
- Kinetics of formation of silicides: A reviewJournal of Materials Research, 1986
- Exact description and data fitting of ion-implanted dopant profile evolution during annealingApplied Physics Letters, 1984