Room-temperature operation of AlGaAs/GaAs resonant tunnelling structures grown by metalorganic vapour-phase epitaxy
- 22 June 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (13) , 830-831
- https://doi.org/10.1049/el:19890559
Abstract
This letter reports improvements in resonant tunnelling through AlGaAs/GaAs double barrier quantum wells grown by metalorganic vapour-phase epitaxy. At room temperature peak-to-valley current ratios up to 2.4 and peak current densities of 1.9 × 104 A/cm2 are obtained.Keywords
This publication has 1 reference indexed in Scilit:
- Prospects For Quantum Integrated CircuitsPublished by SPIE-Intl Soc Optical Eng ,1987