Atomic structure and luminescence excitation of GaAs/(AlAs)n(GaAs)m quantum wires with the scanning tunneling microscope
- 29 August 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (9) , 1168-1170
- https://doi.org/10.1063/1.112978
Abstract
We report on the imaging of a molecular beam epitaxially grown GaAs/(AlAs)n(GaAs)m quantum well‐wire array by means of cross‐sectional scanning tunneling microscopy (XSTM) and scanning tunneling‐induced luminescence (STL). XSTM provides atomically resolved cross‐sectional images of sets of quantum well wires with chemical sensitivity within the group III species and electrical sensitivity to single dopant atoms. This permits the precise observation of growth mechanisms and the identification of defects responsible for inhomogeneities in the growth morphology, as well as the determination of dopant incorporation throughout the structure. STL permits the relative quantum efficiency of individual quantum wires to be quantified.Keywords
This publication has 9 references indexed in Scilit:
- Dopant and carrier profiling in modulation-doped GaAs multilayers with cross-sectional scanning tunneling microscopyApplied Physics Letters, 1993
- Direct imaging of dopants in GaAs with cross-sectional scanning tunneling microscopyApplied Physics Letters, 1993
- N- and P-type dopant profiles in distributed Bragg reflector structures and their effect on resistanceApplied Physics Letters, 1992
- Gallium desorption during growth of (Al,Ga)As by molecular beam epitaxyApplied Physics Letters, 1992
- Nanometer scale resolution luminescence imaging of quantum wire structure with a scanning tunneling microscopeIEEE Transactions on Electron Devices, 1992
- Luminescence in scanning tunneling microscopy on III–V nanostructuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Fabrication of buried GaAlAs NM-structures by deep UV holographic lithography and MBE growth on finely channelled substratesMicroelectronic Engineering, 1991
- Tunneling microscopy and spectroscopy of molecular beam epitaxy grown GaAs-AlGaAs interfacesApplied Physics Letters, 1990
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982