Triode characteristics and vacuum considerations of evaporated silicon microdevices

1 March 1993

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Vol. 11 (2) , 422-425
https://doi.org/10.1116/1.586875

Abstract

Fowler–Nordheim plots of evaporated Si cold emitter arrays, tested in triode configuration at 42 and 300 K, are found to be temperature independent. Fluctuations in emission current decrease with decreasing temperature. Pressure dependence of collector current, measured in a diode configuration for collector voltage range of 90–130 V, shows a sharp decrease if the pressure is raised above 2×10⁻⁴ Torr.

Keywords

SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013−0065 K
TEMPERATURE RANGE 0273−0400 K
PRESSURE DEPENDENCE
HIGH VACUUM
MICROELECTRONICS
TRIODE TUBES
ARRAYS
FIELD EMISSION

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