Improved 2DEG mobility in selectively doped GaAs/ N -AlGaAs grown by MOCVD using triethyl organometallic compounds

11 October 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (21) , 887-888
https://doi.org/10.1049/el:19840602

Abstract

In AlGaAs grown by MOCVD, carbon incorporation into the AlGaAs layer is discussed. For AlGaAs grown by trimethyl organometallic compounds, trimethyl aluminium and trimethyl gallium, remarkable carbon incorporation of up to about 10¹⁸ cm⁻³ is observed, although the carbon concentration decreases with the increase of the mole fraction ratio of arsine (AsH₃) to III group organometallic compounds, [AsH₃]/[III]. On the other hand, the use of triethyl organometallic compounds, triethyl aluminium and triethyl gallium, results in less carbon incorporation (∼10¹⁶ cm⁻³ independently of [AsH₃]/[III]. Moreover, in selectively doped GaAs/n-Al_0.3Ga_0.7As heterostructures, two dimensional electron gas (2DEG) mobility is considerably improved using triethyl organometallic compounds in place of trimethyl organometallics. A 2DEG mobility of 445 000 cm²/V s is obtained for the SD heterostructure with a sheet electron concentration of 5.1 × 10¹¹ cm⁻² at 2 K.

Keywords

This publication has 0 references indexed in Scilit: