Effects of Chemical Impurities on the Radiation Damage Constant of Silicon Solar Cells

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Abstract
The modified damage constant, KL = (1/Li2 – 1/LO 2).φ−1, is obtained from the drop rate of the photo- current at 1.0 μm monochromatic light irradiation, where the minority carrier diffusion length in the bulk region before γ-irradiation, L0 , is estimated by fitting the observed spectral response curve to those calculated with the diffusion length as parameter. The values Li and φ represent the minority carrier diffusion length after γ-irradiation, and the total flux of incident γ-ray photons, respectively. When N/P-type cells are contaminated with Cu, the values of KL by about one order of magnitude compared with non-doped cells, while those of the P/N-type cell contaminated with either Cu or Ni ane only slightly smaller than when not doped. The KL values of the pulled (C.Z) bulk P/N-type cell are about 1/2 those of the floating zone (F.Z) bulk cell. The curves of KL of the non-doped F-Z and C-Z bulk P/N-type cell vs. total dosage begin to decrease from a point below 1016 photons/cm2 total dose. Also, the damage constant, K=(γi-1 –TO−1)φ−1, of n-type floating zone (F-Z) and pulled (C-Z) bulk P/N-type cells and of p-type C-Z bulk N/P-type cells, both γ-irradiated, is seen to increase with dopant concentration in the bulk region.

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