Molecular dynamics and quasidynamics simulations of the annealing of bulk and near-surface interstitials formed in molecular-beam epitaxial Si due to low-energy particle bombardment during deposition
- 1 January 1991
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 9 (1) , 91-97
- https://doi.org/10.1116/1.577136
Abstract
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