Effects of predeposition HF/NH4F treatments on the electrical properties of SiO2/Si structures formed by low-temperature plasma-assisted oxidation and deposition processes
- 1 July 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 11 (4) , 945-951
- https://doi.org/10.1116/1.578573
Abstract
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