Characterization of the interface between Al–1% Si and rapidly annealed Mo–polycide

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Abstract
In this paper, the results of an investigation of the Mo–polycide/Al–1% Si interface characteristics are reported. Mo–polycide was produced by sputtering a 0.3 μm MoSi2.2 film on 0.3 μm of phosphorus doped poly-Si. The composite layer was rapidly annealed at 1100 °C for 10 s with a tungsten halogen lamp. A 0.25 μm Al–1% Si film was sputtered onto the Mo–polycide and then sintered in forming gas (10% H2, 90% N2) for 45 min at temperatures ranging from 400 to 550 °C. RBS and AES analysis indicated that the Al–1% Si/MoSi2 interface was stable up to 500 °C. Al and Si interdiffusion across the silicide layer was only observed at 550 °C. After a sinter at 450 °C, an abrupt interface between MoSi2 and Al–Si was observed by cross-sectional TEM and a contact resistance of 0.5 Ω was measured for 5×5 μm2 contact windows. This was approximately seven times lower than the Al/n+ poly-Si contact resistance.

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