Minority carrier relaxation in undoped n‐type gallium nitride(GaN) thin films was studied by photoconductivity decay measurements in the time span from 50 ns to 50 s. The decay is characterized by an initial exponential decay followed by a quasi‐power‐law decay for decades of time longer than 1 μs. The decay rate is insensitive to the electron concentration and is only slightly temperature dependent. The results are discussed in terms of hole trapping at gap states and subsequent recombination. The studies revealed that the dominant recombination mechanism is very different from recombination through dislocations and that the valence band‐tail states in n‐type GaN seem to be negatively charged.