Simulations of the transient photoconductivity in a-SiO2 using a multiple-trap model
- 1 January 1980
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (1) , 490-494
- https://doi.org/10.1063/1.327349
Abstract
Computer simulations for transient photocurrent produced by a uniform excitation in a system with an exponential distribution of traps have been performed, and the results have been compared with recent experimental data of the transient photoconductivity in SiO2 and found to show excellent agreement. The temperature dependence of the parameters of our multiple‐trap model are discussed with reference to the experimental results, providing further support for the application of this model to a‐SiO2.This publication has 19 references indexed in Scilit:
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