Recombination lifetime of InxGa1−xAs ternary alloys
- 1 January 1995
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 321 (1) , 412-424
- https://doi.org/10.1063/1.47050
Abstract
The recombination lifetime of In x Ga1−x As ternary alloys was measured over a composition range of 0.53<x<0.74. The lattice matched ternary (x=0.53) was fabricated as a double heterostructure. Here InP layers provided both surface passivation and minority‐carrier confinement. The non lattice‐matched ternaries were grown on InP with an intermediate grading layer. Recombination in latticed‐matched films was controlled by defects at low doping levels and radiative and/or Auger recombination at higher doping levels. Recombination in the mismatched films appeared to be dominated by dislocations at the highest indium concentrations.Keywords
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