Method for Determining Charge Production in Semiconductors and Insulators

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Abstract
A method is described which allows separate determination of charge injection from an electrode into a semiconductor or insulator and separate determination of charge production in the bulk or at surfaces by thermal or radiative means. A basic part of the method is the use of a barrier layer of very high resistance at one or two surfaces of a material such as a crystal of CdS or anthracene. These barriers serve in this way as collecting capacitors for the charges. The amount of charge collected can be determined by quickly discharging these capacitors by light. By this method, in addition to determining very small rates of charge production, the total amount of charge made available in the sample by thermal charge production can be found. Radiative charge production in the presence or absence of external fields can also be determined.

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