A trench transistor cross-point DRAM cell
- 1 January 1985
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 714-717
- https://doi.org/10.1109/iedm.1985.191075
Abstract
A 1T DRAM cell with both the transistor and the capacitor fabricated on the sidewalls of a deep trench is described. Trench Transistor Cell (TTC) fabrication and characterization are discussed.Keywords
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