Preparation of Polycrystalline Silicon by Hydrogen-Radical-Enhanced Chemical Vapor Deposition
- 1 January 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (1A) , L10-13
- https://doi.org/10.1143/jjap.26.l10
Abstract
The preparation of both amorphous and epitaxial crystalline silicon films by Hydrogen-Radical-Enhanced Chemical Vapor Deposition at variable hydrogen flow rates is discussed. The feasibility of fabricating polycrystalline Si at high growth rates and a low substrate temperature is demonstrated. Finally, the n-type characteristics of PH3 doping and p-type characteristic for BF3 doping are examined in terms of the conductivity and the Hall mobility of the films.Keywords
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