Spectral ellipsometry on patterned wafers

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Abstract
Ellipsometry has seen only limited application to the post-deposition pattern etch process despite the fact that physical parameters such as groove width, depth and pitch are as critical to product performance as the more basic thin film parameters traditionally analyzed using ellipsometry. This paper presents initial theoretical results pertaining to modeling the reflectance from a 1D etched pattern on a semiconductor substrate. To analyze the sample's effects upon the incident beam polarization, we formulate the zeroth-order reflection coefficients for the orthogonal p and s polarization states and construct models of ellipsometric parameters (Psi and Delta) for a rectangular-groove surface pattern, emphasizing the effect of groove geometry upon these quantities.

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