Gas source silicon molecular beam epitaxy using disilane
- 2 May 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (18) , 1484-1486
- https://doi.org/10.1063/1.99106
Abstract
In gas source silicon molecular beam epitaxy (MBE) using disilane, good crystal quality silicon epitaxial films were obtained at a temperature as low as 630 °C. In comparison with gas source Si‐MBE using silane, a growth rate several times higher was attained. Boron doping in the gas source Si‐MBE was also studied. Using HBO2 as the B‐doping source, the doping level was controlled in the range of 1016–1018 cm−3 by the cell temperature. Because of the low growth temperature and the high growth rate, an abrupt doping profile was obtained.Keywords
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