VIA-6 Comparison of side-gating behavior between InP MISFET's and GaAs MESFET's

• 1 November 1985
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
• Vol. 32  (11) , 2552-2553
• https://doi.org/10.1109/T-ED.1985.22373

Abstract