Intersubband optical transitions in Si-Si0.5Ge0.5 superlattices
- 15 May 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (20) , 1986-1988
- https://doi.org/10.1063/1.101190
Abstract
Large oscillator strengths are predicted for optical transitions between conduction subbands of Si‐Si0.5 Ge0.5 strained‐layer superlattices. The transition energies in question are in the infrared range (50–300 meV).Keywords
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