Analysis of Temperature Dependent Hall Conductivity in Silicon Inversion Layers in Strong Magnetic Fields by a Mobility Edge Model
- 15 December 1981
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 50 (12) , 3839-3840
- https://doi.org/10.1143/jpsj.50.3839
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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