Nonequilibrium devices for infra-red detection
- 9 May 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (10) , 451-452
- https://doi.org/10.1049/el:19850321
Abstract
To increase the operating temperature of long-wavelength infra-red detectors it is proposed that narrow-gap semiconductor devices be operated in a nonequilibrium mode such that the carrier densities are held below their equilibrium, near-intrinsic, levels. The possible use of exclusion in photo-conductors and extraction in photodiodes is discussed, and experimental results are shown for the former.Keywords
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