The growth of nucleation layers for high-quality diamond CVD from an r.f. plasma
- 1 May 1995
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 4 (5-6) , 735-739
- https://doi.org/10.1016/0925-9635(94)05225-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The microstructure of inclusions in nanocrystalline carbon films deposited at low temperatureDiamond and Related Materials, 1994
- Capacitively coupled r.f. plasma sources: a viable approach for CVD diamond growth?Diamond and Related Materials, 1994
- Gas-phase kinetics during microwave plasma-assisted diamond deposition: Is the hydrocarbon product distribution dictated by neutral-neutral interactions?Journal of Applied Physics, 1992
- A study on synthesis of diamond by capacitively coupled RF plasma-assisted chemical vapor depositionDiamond and Related Materials, 1992
- Mole fractions of H, CH3, and other species during filament-assisted diamond growthApplied Physics Letters, 1991
- Suitable gas combinations for pure diamond film depositionThin Solid Films, 1991
- Raman And Fluorescence Spectroscopic Characterization Of Diamonds And CVD Diamond FilmsPublished by SPIE-Intl Soc Optical Eng ,1989
- Characterization of diamond films by Raman spectroscopyJournal of Materials Research, 1989
- Synthesis of diamonds by use of microwave plasma chemical-vapor deposition: Morphology and growth of diamond filmsPhysical Review B, 1988
- Critical Transport Current Density in Sintered Oxide Superconductors with High Critical TemperatureJapanese Journal of Applied Physics, 1988