Effect of the electron-hole interaction on the dielectric response function

The dielectric response function $\epsilon (\overrightarrow{\mathrm{q}},\omega )$ has been calculated for an intrinsic semiconductor taking account of the electron-hole interaction in the pair produced virtually. The numerical calculation is carried out for GaAs on the basis of a simplified band model. The result shows that the electron-hole interaction has a significant effect on $\epsilon (\overrightarrow{\mathrm{q}},0)$.