Abstract
The conductivity of amorphous As2 Te3 and As2 Te3Ge was measured down to 4.2 K at frequencies ranging between 0.1 and 100 kHz. The ac conductivity below 100 K, which is totally unaffected by the dc conductivity, is proportional to ωsTn with s=1 and n0.5 for as-deposited films and n0.1 for annealed films. These experiments are interpreted in terms of Elliott's theory based on electron pairs hopping over a barrier between both paired and random defects.