Effects of Doping Profile on GaAs, Double-Drift IMPATT Diodes at 33 and 44 GHz Using the Energy-Momentum Transport Model
- 1 October 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 32 (10) , 1353-1361
- https://doi.org/10.1109/tmtt.1984.1132847
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Comparison of theoretical and experimental results for millimeter-wave GaAs IMPATT'sIEEE Transactions on Electron Devices, 1984
- Simulation of GaAs IMPATT diodes including energy and velocity transport equationsIEEE Transactions on Electron Devices, 1983
- Broad-Band Characteristics of EHF IMPATT DiodesIEEE Transactions on Microwave Theory and Techniques, 1982